Thermaltake Smart 630 W Power Supply Review

Primary Analysis

On this page we will take an in-depth look at the primary stage of the Thermaltake Smart 630 W. For a better understanding, please read our “Anatomy of Switching Power Supplies” tutorial.

This power supply uses one KBU10J rectifying bridge, which is attached to an individual heatsink. This bridge supports up to 10 A at 75° C, so in theory, you would be able to pull up to 1,150 W from a 115 V power grid. Assuming 80% efficiency, the bridge would allow this unit to deliver up to 920 W without burning itself out. Of course, we are only talking about this particular component. The real limit will depend on all the components combined in this power supply.

Figure 10: Rectifying bridge

The active PFC circuit uses two IPP60R190C6 MOSFETs, each one capable of delivering up to 20.2 A at 25° C or 12.8 A at 100° C in continuous mode (note the difference temperature makes), or up to 59 A in pulse mode at 25° C. These transistors present a 190 m&O
mega; resistance when turned on, a characteristic called RDS(on). The lower this number the better, meaning that the transistors will waste less power, and the power supply will achieve a higher efficiency.

Figure 11: Active PFC transistors and diode

The output of the active PFC circuit is filtered by a 330 µF x 400 V electrolytic capacitor from Teapo and labeled at 85° C.

In the switching section, two MDP18N50 MOSFETs are used in the traditional two-transistor forward configuration, supporting up to 18 A at 25° C or 11 A at 100° C in continuous mode, or up to 72 A in pulse mode at 25° C, with an RDS(on) of 270 mΩ.

Figure 12: One of the switching transistors

The primary is managed by an omnipresent CM6800 active PFC/PWM controller.

Figure 13: Active PFC/PWM controller

Let’s now take a look at the secondary of this power supply.