As one would expect in a high-efficiency power supply, the NZXT HALE90 V2 850 W uses a synchronous design, where the Schottky rectifiers are replaced with MOSFETs, which is done in order to increase efficiency.
The +12 V output uses four IPP023NE7N3 G MOSFETs, each one supporting up to 120 A at 100° C in continuous mode, or up to 480 A at 25° C in pulse mode, with a maximum RDS(on) of 2.3 mΩ.
The +5 V output uses one PSMN2R6-40YS (“2R640PBm”) MOSFET for the direct rectification. This transistor supports up to 100 A at 100° C in continuous mode, with a maximum RDS(on) of 3.7 mΩ. For the “freewheeling” part of the rectification, one IPD036N04L G MOSFET is used. This transistor supports up to 90 A at 25° C or 87 A at 100° C in continuous mode or up to 400 A at 25° C in pulse mode, with a maximum RDS(on) of 3.6 mΩ. These transistors are controlled by an FSP6601 custom integrated circuit.
The +3.3 V output uses the same configuration as the +5 V output, as described above.
The outputs are monitored by a WT7527 integrated circuit, which supports over voltage (OVP), under voltage (UVP), and over current (OCP) protections. There are two +12 V over current protection (OCP) channels, but the manufacturer decided to use only one of them, giving this unit a single +12 V rail.
This power supply uses Japanese electrolytic capacitors, from Chemi-Con, labeled at 105° C in its secondary. There are some solid capacitors on the printed circuit board of the modular cabling system.