Toshiba and NEC this week announced improvements in magnetoresistive random access memory (MRAM) that will allow it to reach writing and reading speeds of 200 MB/s. The companies claim to have solved a problem involving a drive circuit that degraded read operation from memory cells. The new MRAM also runs at a low voltage of 1.8 v. However, the chip is still limited to a density of 16 Mb, even though it is smaller than previous prototypes.