Samsung unnounces a new memory device technology that will allow a faster access to electronic devices. The 40nm NAND flash chips wil improve memory performance and enable higher scalability, which can improve manufacturing process technology from 40 nm to 20nm.The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, that reduces inter-cell noise levels.
The 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours). It will be available in 2008.
Originally at http://www.hardwaresecrets.com/news/Samsung-Unveils-32-Gb-NAND-Flash/1438
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