Pretec will begin mass production, in August, of a 4 GB SD card. The device is based on two 16 Gb SLC NAND Flash chips fabbed at 65 nm. It is compatible with the SD 1.1 specification, offering access speed of up to 20 MB/s, and is able to work with SD 1.0, but with a drop in performance to 10 MB/s. The price of such a huge capacity is high: USD 699.
OCZ has further extended its lineup of memories with the release of a new DDR500 product aimed at gamers. The PC-4000 1 GB Gold Edition runs with 3-4-4-8 timings and operates at 2.8 volts (users can tweak it to 3 volts without invalidating lifetime warranty). The new memory, which feature gold layered copper heatspreader, is available in 1 GB modules and 2 GB dual channel kits (2 x 1 GB).
OCZ has launched a DDR600 memory utilizing TCCD chips from Samsung. The DDR PC-4800 Platinum Elite Edition (EE) will run at 400 MHz with 2-2-2-5 timings and at 600 MHz with 2.5-4-4-10. The company guarantees the modules, which have mirrored platinum copper heatspreaders, to handle up to 3 volts without invalidating its warranty. The new memory is available only in 1 GB dual channel kits (2 x 512 MB).
SanDisk claims to be the first company to offer a 512 MB microSD card. The format, aimed at mobile phones and devices, has been officially adopted by the SD Card Association (SDA). The company also released a 256 MB version and expects to launch a 1 GB card by the end of the year and a 2 GB one in 2006. The 512 MB microSD, to be available in August, will sell for USD 70, while the 256 MB is priced at USD 45.
Rambus has announced a new version of its XDR memory technology capable of reaching 8 GHz. That would make it five times faster than current GDDR products. XDR2 incorporates a set of new technologies such as micro-threading, which provides more data bandwidth to memory controllers, and adaptive timing, a speed enhancement that compensates for voltage and temperature variations. Products based on the new standard should be available in 2007.
GeIL added new DDR400 memory modules to its ONE series with record latency timings: 1.5-2-2-5. According to the company, they will also run at 600 MHz, with 2.5-4-4-7 settings. The memories, based on TCCD chips from Samsung, have platinum copper heatspreaders, run at 2.55 to 2.95 volts and are available in 512 MB modules as well as 512 MB (2 x 256 MB) and 1 GB (2 x 512 MB) dual channel kits.
Japanese Elpida announced that it has completed the development of a 2 Gb DDR2 SDRAM device using 80 nm process technology. It is expected to enable volume support of high-speed DDR2 such as DDR2-800. The chip is also suitable for incorporation onto the FB-DIMM format. Volume production is expected to begin by the end of the fiscal year.
IBM has signed a new license agreement to use Rambus' XDR memory controller interface cell called XIO. This macro cell provides a wide on-chip CMOS level signalling interface to the memory controller logic and a high speed differential Rambus signalling level (DRSL) interface to the XDR memory system.
OCZ promises to add low latencies to low pricing with its new PC-3500 Gold GX memory aimed at gamers. The DDR433 modules have 2-2-2-5 latency settings and run at 2.8 volts. It includes gold layered copper heatspreader and features Extended Voltage Protection (EVP) and Ultra Low Noise (ULN) technology. The 1 GB dual channel kit (2 x 512 MB) is expected to sell for USD 190.
Samsung has begun production of NAND flash memories with 4 Gb capacity in a 70 nm process. The company already offers 8 Gb devices, but it says the new units will offer more capacity and lower prices. The 4 Gb memories sport writing speeds of up to 16 MB/s and allow real-time storage of high-definition video. Production will be further boosted by the end of the year.
