Toshiba and NEC boost MRAM memory

Author: Rodrigo Chia Date: February 9, 2006 - 8:39 AM PST Category: Memory More Info: http://www.nec.co.jp/press/en/0602/0702.html Real-time pricing for Patriot PD32GSDHC4 Patriot Duplicator 32 GB SDHC Class 4 Flash Memory Card with Auto Back-up PD32GSDHC4 Direct PMSD32GBC4DUP Electronics Used and New Amazon: $90.99 Toshiba and NEC this week announced improvements in magnetoresistive random access memory (MRAM) that will allow it to reach writing and reading speeds of 200 MB/s. The companies claim to have solved a problem involving a drive circuit that degraded read operation from memory cells. The new MRAM also runs at a low voltage of 1.8 v. However, the chip is still limited to a density of 16 Mb, even though it is smaller than previous prototypes. Print Version | Send to Friend | Bookmark Article | Comments (0)

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