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Home » News » Memory

Hynix develops 512 Mb GDDR4 memory
Author: Rodrigo ChiaDate: December 5, 2005 - 6:14 AM PST
Category: Memory
More Info: http://www.hynix.com/allnews/eng/preng_readB.jsp?NEWS_DATE=2005-12-05:...
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Hynix has announced the availability of the world’s first 512 Mb GDDR4 devices. The new standard is said to improve data processing speed by close to two times that of GDDR3. Hynix’s 16Mx32 512 Mb GDDR4 operates at 2.9 Gbps. Mass production is expected to start in early 2006. Last October, Samsung announced the development of 256 Mb GDDR4 parts, slated to enter mass production in the second quarter of 2006.
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